INFI-IPB042N10N3GATMA1
Product Attributes
TYPE | DESCRIPTION | SELECT ALL |
Categories | Discrete Semiconductor Products | |
---|---|---|
Transistors - FETs, MOSFETs - Single | ||
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 214W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-3 | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Base Part Number | IPB042 |